Micron recently announced they are working on a new memory technology, and although not many technical details about it, Micron says its technology, called Hybrid Memory Cube (HMC), will come to revolutionize the memory market. According to preliminary data, this new memory design may provide greater bandwidth, with lower power consumption and dimensions, existing technologies. Micron claims that HMC has over 20 times the performance of DDR3 memory module, and to achieve this high bandwidth, have developed a memory controller that has been added as a logical layer in the structure of the chip, which can solve the bottleneck problems of the current conventional implementations. Hybrid Memory
Cube is exponentially more efficient in terms of consumption using a tenth of the energy per bit memories using current HMC technology and also provides a considerable reduction in the size, its architecture and stacked (stacked) uses 90% less space than the current Drimmer chip. This new technology is scheduled to make its debut between 2015 and 2016 for the general consumer market. There will be more details of this new technology in the coming months. In addition, Micron is also working on next-generation memories, DDR4, but did not mention if it relates to HMC.
Today, several manufacturers have shown their DDR4 memory models, but its release was not until within at least 2 years, as yet the DDR3 implemented have not yet finished. These models operate at frequencies between 1.600MHz and 3.200MHz, and are superior to the DDR3 not only in performance but also energy efficiency. The manufacturing process used for these modules DDR4 is 30nm, so the voltage needed for operation is reduced to 1.2 V versus the 1.5 V and 1.65 V even the current DDR3 memory. Obviously there is still no CPUs or motherboards that support this type of memory, but a matter of time for manufacturers to showcase their prototypes that if the bear.
0 comments:
Post a Comment